Measurement of interface state characteristics of MOS transistor utilising charge-pumping techniques
作者:
W.V.Backensto,
C.R.Viswanathan,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1981)
卷期:
Volume 128,
issue 2
页码: 44-52
年代: 1981
DOI:10.1049/ip-i-1.1981.0018
出版商: IEE
数据来源: IET
摘要:
The determination of both the energy and the spatial distribution of interface states of an MOS transistor utilising charge-pumping measurements is described. The energy distribution of interface states is determined by measuring the charge-pumping current as a function of gate bias at several temperatures. Although the energy profile obtained shows several maxima and minima, a gradual increase in magnitude occurs as the band edge is approached. The spatial distribution of interface states is determined by measuring the frequency dependence of the charge-pumping current. The devices tested show an exponentially decreasing interface-state density away from the surface. Information is also obtained on capture crosssections from the frequency dependence of the charge-pumping current.
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