Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor‐Grownp‐nJunctions
作者:
C. J. Nuese,
A. G. Sigai,
J. J. Gannon,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 20,
issue 11
页码: 431-434
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654004
出版商: AIP
数据来源: AIP
摘要:
In1−xGaxP laser diodes which emit coherently at 80 °K at wavelengths as short as 6105 Å with threshold current densities of 4000–6000 A/cm2have been fabricated from vapor‐grown In1−xGaxPp‐njunction structures. This is the shortest‐wavelength laser emission and the first example of coherentorangeemission yet reported from a semiconductorp‐njunction. From vapor‐grown In1−xGaxP spontaneous‐light‐emitting diodes, external quantum efficiencies in excess of 0.1% have been obtained for orange and red emission at room temperature.
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