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A NEW MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GaAs

 

作者: B. Fay,   G. S. Kino,  

 

期刊: Applied Physics Letters  （AIP Available online 1969）
卷期: Volume 15, issue 10  

页码: 337-339

 

ISSN:0003-6951

 

年代: 1969

 

DOI:10.1063/1.1652849

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The velocity‐field characteristic for electrons in GaAs has been measured in the negative differential mobility region between 4.5 and 11 kV/cm by a new direct method involving probe measurements on the surface of a bulk GaAs two‐port amplifier. The measurements were taken on GaAs of resistivity in the 500–1000 &OHgr;‐cm range.

 

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