Channelling studies of ion implantation induced lattice defects in zinc telluride
作者:
A. Bontemps,
E. Ligeon,
R. Danielou,
期刊:
Radiation Effects
(Taylor Available online 1974)
卷期:
Volume 22,
issue 3
页码: 195-204
ISSN:0033-7579
年代: 1974
DOI:10.1080/10420157408230780
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Channelling effect measurements were used to study the disorder induced by ion implantation in Zinc Telluride at 77 K and 300 K. The experimental set up is described and its principal advantages are (a) the use of a cryogenic pumping (b) the possibility to perform simultaneous implantations and analyses. The channelling parameters of interest are measured: critical angle, minimum yield and stopping power. 120 keV argon implantations are performed a t room temperature. A disorder saturation is evidenced for doses higher than 1015ions/cm2but the “random” level is not reached. Implantations and analyses at 77 K are made. The “random” level is not reached and sputtering during implantation is observed. To explain this saturation the following explanations are proposed: an equilibrium is reached between the defect production and the removal process and/or the iconicity of Zinc Telluride does not allow a complete lattice disordering.
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