EL2 distributions in doped and undoped liquid encapsulated Czochralski GaAs
作者:
D. E. Holmes,
R. T. Chen,
J. Yang,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 5
页码: 419-421
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.93949
出版商: AIP
数据来源: AIP
摘要:
We compare the longitudinal and radial distributions of EL2 in undoped semi‐insulating and intentionally dopedn‐type GaAs crystals grown by the liquid encapsulated Czochralski technique. Longitudinal profiles in undoped crystals are controlled by changes in melt stoichiometry as the crystal is pulled from the melt. EL2 profiles along crystals doped above about 1×1017cm−3, on the other hand, are controlled primarily by the carrier concentration as a result of the suppression of EL2 by free electrons. Radial EL2 profiles are typically W shaped and M shaped in undoped and doped (above threshold) crystals, respectively. The origin of these radial profiles is discussed in terms of residual stress, melt stoichiometry, and the suppression of EL2 by electrons. Our results are also discussed in the light of the antisite model for EL2.
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