Novel GaAs&sngbnd;(AlGa)As Cold‐Cathode Structure and Factors Affecting Extended Operation
作者:
H. Schade,
H. Nelson,
H. Kressel,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 20,
issue 10
页码: 385-387
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1653986
出版商: AIP
数据来源: AIP
摘要:
A novel planar cold‐cathode structure has been developed based on a GaAs&sngbnd;(AlGa)As heterojunction and a negative electron affinity GaAs surface. As an important feature of the device, the lateral confinement of the current flow to the desired area of the emitting surface is obtained by the selective diffusion of zinc. Under pulsed conditions, emission efficiencies as high as 4% and emission current densities as high as 7 A/cm2have been achieved. The release of impurities from the anode as a result of electron‐stimulated desorption has been found to be a major factor affecting the cathode life under dc operation. The influence of this factor can be greatly minimized by different techniques such as using low anode voltages and magnetic field deflection.
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