Transport and localized levels in amorphous binary chalcogenides
作者:
Richard H. Bube,
John E. Mahan,
Ralph T.‐S. Shiah,
Hubert A. Vander Plas,
期刊:
Applied Physics Letters
(AIP Available online 1974)
卷期:
Volume 25,
issue 7
页码: 419-421
ISSN:0003-6951
年代: 1974
DOI:10.1063/1.1655532
出版商: AIP
数据来源: AIP
摘要:
Measurements of photoconductivity versus intensity and temperature, photoconductivity decay, thermoelectric power versus temperature, and field effect have been extended to several binary amorphous semiconductors: Sb2Te3, As2Te3, As2Se3, and Ge2Te7, to be compared with earlier measurements on As2SeTe2and Ge3Se2Te4and more complex multicomponent chalcogenides. Analogous behavior is found in all these materials: about 1019cm−3eV−1localized recombination levels within about 0.1 eV of the gap edges; about 1019cm−3eV−1localized levels near the equilibrium Fermi level; thermally activated mobility with activation energy of the order of 0.1–0.2 eV. Crystallization produces an increase in photoconductivity at 100°K by over a factor of 106.
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