This paper reviews our recent research on ion‐ and photon‐assisted doping and growth of homoepitaxial CdTe thin films. Our earlier work demonstrated doping to 2×1017cm−3with 60 eV P ions during growth by vacuum deposition, but gave low values of minority‐carrier diffusion lengthLd. To increaseLd, we (a) explored photon‐assisted doping, (b) varied the Cd/Te ratio, (c) used lower ion energies, (d) explored co‐evaporation doping from an Cd3As2, and (e) explored electron‐assisted doping. Although 512 nm illumination during growth enhanced crystalline quality, there was no evidence for any increase in doping over that of films not illuminated during growth. Increasing the Cd/Te ratio (1.00<Cd/Te<2.2), both with and without ions and/or light during deposition, had strong effects on In/p‐CdTe Schottky junction transport, but gave little useful alteration of the doping behavior. Using ion‐assisted doping, decreasing the P ion energy to 20 eV, using a Cd/Te ratio=1.002 and adding a low‐energy electron flux has yielded substantially largerLdwith controlled doping up to 1×1017cm−3.