Cs&sngbnd;O negative‐electron‐affinity surfaces on silicon
作者:
J.R. Howorth,
R. Holtom,
A.L. Harmer,
E.W. Trawny,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 21,
issue 7
页码: 316-317
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654393
出版商: AIP
数据来源: AIP
摘要:
The thickness of cesium and oxygen deposits required to produce negative electron affinity on semiconductors is not clear from published data. Photoemission measurements show that, for heavily dopedp‐type silicon, negative electron affinity can be achieved with either monolayer or thick deposits of cesium and oxygen, whereas deposits of intermediate thickness are less effective. The results also show that for silicon the lowest effective work function can be achieved by monolayer activation.
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