Polycrystalline Diamond Film on Si(100) by XPS
作者:
Steven J. Schmieg,
David N. Belton,
期刊:
Surface Science Spectra
(AIP Available online 1992)
卷期:
Volume 1,
issue 4
页码: 329-332
ISSN:1055-5269
年代: 1992
DOI:10.1116/1.1247661
出版商: American Vacuum Society
关键词: DIAMONDS;CHEMICAL VAPOR DEPOSITION;SURFACE ANALYSIS;PHOTOELECTRON SPECTROSCOPY;FILM GROWTH;CARBON;THIN FILMS;SEM;POLYCRYSTALS
数据来源: AIP
摘要:
Filament-assisted chemical vapor deposition (CVD) diamond film growth on Si(100) was studied using x-ray photoelectron spectroscopy (XPS) in a system that couples a growth chamber to an ultrahigh vacuum analytical chamber. Diamond nucleates and grows on a SiC layer formed on the Si(100) substrate [D. N. Belton and S. J. Schmieg, Appl. Phys. Lett.54, 416 (1989)]. After about 17 h growth XPS showed no Si signal from the substrate, no detectable contaminants, and only carbon present in survey scans. Electron energy loss spectroscopy (EELS) spectra obtained by x-ray excitation of the C 1slevel can be used as a fingerprint for distinguishing diamond from graphite or carbides [D. N. Belton and S. J. Schmieg, J. Vac. Sci. Technol. A8, 2353 (1990)]. The identification of a continuous diamond film was confirmed with Raman spectroscopy and scanning electron microscopy (SEM).
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