The deposition rate, electronic and optical properties of hydrogenated amorphous silicon films prepared from rf glow discharge decomposition of disilane (Si2H6) diluted in helium have been measured. These films show excellent electrical and optical properties and, most importantly, a high deposition rate coupled with satisfactory solar cell application was realized for the first time. At a deposition rate of 11 A˚/s, 5.47% and 6.5% conversion efficiencies were obtained with a first trial ofn‐i‐ptype solar cells deposited on SnO2/ITO glass and metal substrates, respectively.