Platinum diffusion into silicon from PtSi
作者:
A. Prabhakar,
T. C. McGill,
M‐A. Nicolet,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 12
页码: 1118-1120
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94247
出版商: AIP
数据来源: AIP
摘要:
We have observed platinum diffusion into the silicon underlying a PtSi film. Silicon substrates covered with platinum films were annealed at temperatures from 300 to 800 °C to form the silicide. Backscattering spectrometry spectra show no degradation of the silicide in the samples treated below 700 °C. Deep level transient spectroscopy (DLTS) was used to measure diffused platinum electron traps. Electron trap concentrations in samples treated below 700 °C are below the DLTS detection limit of 5×1011/cm3. Trap concentration profiles for the samples annealed at higher temperatures were obtained. These profiles cannot in general be explained by simple diffusion from an infinite source of platinum at the surface.
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