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In1−xGaxP:N Laser Operation (cw, 77°K) on the NitrogenA‐Line Transition in Indirect Crystals (x≥ 0.74) and in Direct Crystals above the Fundamental Band Edge (x≥ 0.71)

 

作者: N. Holonyak,   D. R. Scifres,   H. M. Macksey,   R. D. Dupuis,  

 

期刊: Applied Physics Letters  (AIP Available online 1972)
卷期: Volume 20, issue 1  

页码: 11-14

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1653957

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The laser operation (cw, 77°K) of In1−xGaxP on the nitrogenA‐line transition in indirect crystals (x≥0.74) and in direct crystals above the fundamental band edge (x≤0.71) is reported (5450 and 5470 Å, respectively). Thin (1–5 &mgr;) experimental samples are prepared from crystals grown from In solution by a modified Bridgman method. The crystals are doped with GaN or N from the quartz of the synthesis ampoule. The samples are mounted in a sandwich configuration with indium wetted onto a copper heat sink on one side and thin CdS (10–20 &mgr;) and sapphire on the other side. The thin samples are volume excited in a tiny spot by an argon‐ion laser focused through the sapphire window and the CdS spacer which, with the sample, forms a high‐Qcompound cavity.

 

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