In1−xGaxP:N Laser Operation (cw, 77°K) on the NitrogenA‐Line Transition in Indirect Crystals (x≥ 0.74) and in Direct Crystals above the Fundamental Band Edge (x≥ 0.71)
作者:
N. Holonyak,
D. R. Scifres,
H. M. Macksey,
R. D. Dupuis,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 20,
issue 1
页码: 11-14
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1653957
出版商: AIP
数据来源: AIP
摘要:
The laser operation (cw, 77°K) of In1−xGaxP on the nitrogenA‐line transition in indirect crystals (x≥0.74) and in direct crystals above the fundamental band edge (x≤0.71) is reported (5450 and 5470 Å, respectively). Thin (1–5 &mgr;) experimental samples are prepared from crystals grown from In solution by a modified Bridgman method. The crystals are doped with GaN or N from the quartz of the synthesis ampoule. The samples are mounted in a sandwich configuration with indium wetted onto a copper heat sink on one side and thin CdS (10–20 &mgr;) and sapphire on the other side. The thin samples are volume excited in a tiny spot by an argon‐ion laser focused through the sapphire window and the CdS spacer which, with the sample, forms a high‐Qcompound cavity.
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