首页   按字顺浏览 期刊浏览 卷期浏览 Improved Infrared‐Response Technique for Determining Impurity and Defect Levels ...
Improved Infrared‐Response Technique for Determining Impurity and Defect Levels in Semiconductors

 

作者: A. H. Sher,   W. J. Keery,  

 

期刊: Applied Physics Letters  (AIP Available online 1972)
卷期: Volume 20, issue 3  

页码: 120-122

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654072

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The response of reverse‐biased germanium diodes to monochromatic infrared radiation has been studied. Specimens included those fabricated from crystals doped with either copper or gold, or subjected to heat treatment. Preliminary results are reported that show the technique to be useful for identifying such impurities or defects in both lithium‐compensated and high‐purity germanium specimens.

 

点击下载:  PDF (219KB)



返 回