Improved Infrared‐Response Technique for Determining Impurity and Defect Levels in Semiconductors
作者:
A. H. Sher,
W. J. Keery,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 20,
issue 3
页码: 120-122
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654072
出版商: AIP
数据来源: AIP
摘要:
The response of reverse‐biased germanium diodes to monochromatic infrared radiation has been studied. Specimens included those fabricated from crystals doped with either copper or gold, or subjected to heat treatment. Preliminary results are reported that show the technique to be useful for identifying such impurities or defects in both lithium‐compensated and high‐purity germanium specimens.
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