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Heterojunction formation in (CdZn)S/CuInSe2ternary solar cells

 

作者: Richard K. Ahrenkiel,   L. L. Kazmerski,   R. J. Matson,   C. Osterwald,   T. P. Massopust,   R. A. Mickelsen,   W. S. Chen,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 43, issue 7  

页码: 658-660

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94474

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The electrical properties of (CdZn)S/CuInSe2solar cells have been investigated by combining electron beam induced current measurements and capacitance‐voltage measurements on the same device. In the as‐grown device, the CuInSe2is lightly dopedntype. After baking to about 225 °C in vacuum, the CuInSe2converts toptype forming the heterojunction. Oxygen does not appear to be necessary for type conversion to occur.

 

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