Determination of the sign of carrier transported across SiO2films on Si
作者:
Z. A. Weinberg,
W. C. Johnson,
M. A. Lampert,
期刊:
Applied Physics Letters
(AIP Available online 1974)
卷期:
Volume 25,
issue 1
页码: 42-43
ISSN:0003-6951
年代: 1974
DOI:10.1063/1.1655271
出版商: AIP
数据来源: AIP
摘要:
A technique has been developed for determination of the sign of charge carrier transported across an insulating film on a semiconductor substrate, utilizing the charge‐carrier separation properties of a shallowp‐njunction diffused into the semiconductor. For thermally grown SiO2, unmetallized and contacted by a corona discharge in dry air, electrons are found to carry the current for both polarities of surface potential. Also demonstrated is electron‐hole pair production in the Si by electrons entering from the oxide.
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