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Hydrogen interactions with crystalline, amorphous, polycrystalline, and porous silicon
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Hydrogen interactions with crystalline, amorphous, polycrystalline, and porous silicon
作者:
C. G. Van de Walle,
期刊:
AIP Conference Proceedings
(AIP Available online 1995)
卷期:
Volume 342,
issue 1
页码: 15-22
ISSN:0094-243X
年代: 1995
DOI:10.1063/1.48807
出版商: AIP
数据来源: AIP
摘要:
An overview of the various ways in which hydrogen (H) interacts with different forms of silicon (Si) is presented. First‐principles theory has contributed significantly to our understanding of these phenomena. For crystalline silicon, the discussion encompasses H in solid solution, H diffusion, H interactions with deep and shallow levels, and H on the surface. The structure and energetics of Si‐H bonds are relevant for modeling the role of hydrogen in amorphous silicon. For polycrystalline silicon, the interactions of hydrogen with grain boundaries and, in particular, the insertion of H into strained Si‐Si bonds are addressed. A final topic concerns the role of hydrogen in silicon‐based layered structures, which play a role in light emission from porous silicon.
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