Origin of the difference in the open circuit voltage betweenp‐i‐ntype andn‐i‐ptype hydrogenated amorphous silicon solar cells
作者:
I. Sakata,
Y. Hayashi,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 3
页码: 279-281
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.93915
出版商: AIP
数据来源: AIP
摘要:
The origin of the difference in the open circuit voltageVocbetween ap‐i‐nandn‐i‐ptype hydrogenated amorphous silicon solar cells is discussed theoretically, considering the interaction of photogenerated free electrons and holes, i.e., the effect of a self‐field. It has been clarified that the self‐field aids the carrier collection in ann‐i‐pcell whereas it impedes the carrier collection in ap‐i‐ncell. This difference in the effect of the self‐field on the photovoltaic process causes the difference inVocbetween these two type cells.
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