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ANNEALING CHARACTERISTICS OFn‐TYPE DOPANTS IN ION‐IMPLANTED SILICON

 

作者: B. L. Crowder,   F. F. Morehead,  

 

期刊: Applied Physics Letters  （AIP Available online 1969）
卷期: Volume 14, issue 10  

页码: 313-315

 

ISSN:0003-6951

 

年代: 1969

 

DOI:10.1063/1.1652664

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260–300 keV) in an electrically active form are reported. Above a critical dose, room‐temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C.

 

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