Cr‐MIS solar cells having a 2‐cm2area have been fabricated to produce 12.2% efficiency on single crystal and 8.8% efficiency on polycrystalline Si. Surface‐state data were used to predict open‐circuit voltages of 0.60 and 0.50 V, respectively, for the single‐crystal and polycrystalline Si. Spectral response measurements and Cr metal thickness confirm the differences in short‐circuit current density using these two types of Si.