DONOR BEHAVIOR IN INDIUM‐ALLOYED SILICON
作者:
J. O. McCaldin,
J. W. Mayer,
期刊:
Applied Physics Letters
(AIP Available online 1970)
卷期:
Volume 17,
issue 9
页码: 365-366
ISSN:0003-6951
年代: 1970
DOI:10.1063/1.1653436
出版商: AIP
数据来源: AIP
摘要:
The anomalous doping behavior of Si regrown from In solution was studied by (1) Schottky barrier evaluation of conductivity type, (2) electron microprobe analysis for phosphorus, and (3) channeling effect measurements for interstitial In. The latter showed In present at ∼ 1019cm−3, but not occupying a regular substitutional or interstitial position. A correlation was found in the first two measurements between phosphorus contamination andn‐type conductivity. When the In was contacted only by quartz freshly etched in HF, then‐type behavior and phosphorus contamination disappeared. The anomalous doping behavior is most likely due to phosphorus inpurity picked up by the In.
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