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Effect of Oxygen on the Electromigration Behavior of Al Thin Films

 

作者: L. Berenbaum,  

 

期刊: Applied Physics Letters  (AIP Available online 1972)
卷期: Volume 20, issue 11  

页码: 434-436

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654005

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Aluminum thin films were electrically stressed in a high‐vacuum furnace and the damage resulting from the electromigration of aluminum ions was monitored by the change in stripe resistance. When high‐purity oxygen was periodically bled into the furnace,R˙ranged between a constant value and zero, depending on the magnitude of &Dgr;R. The proposed model suggests the stabilization of microscopic voids by the formation of a thin oxide film on the void surface.

 

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