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IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS INp‐TYPE SILICON

 

作者: P. H. Fang,   H. Tarko,   P. J. Drevinsky,   P. Iles,  

 

期刊: Applied Physics Letters  （AIP Available online 1970）
卷期: Volume 17, issue 10  

页码: 426-427

 

ISSN:0003-6951

 

年代: 1970

 

DOI:10.1063/1.1653256

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A study ofp‐type silicon shows that (1) the annealing temperature of electron‐irradiation damage increases as the acceptor concentration increases and (2) the isochronal annealing behavior of damage in samples with gallium and aluminum impurities is different from that in boron‐containing samples, which show a higher annealing temperature.

 

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