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Annealing of ion‐implanted silicon by an incoherent light pulse

 

作者: H. A. Bomke,   H. L. Berkowitz,   M. Harmatz,   S. Kronenberg,   R. Lux,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 11  

页码: 955-957

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90232

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Annealing of boron‐implanted silicon by a single 15‐&mgr;sec pulse from a flash lamp has been observed. The required energy density was 27 J/cm2incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples.

 

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